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M29F200T Datasheet 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

Manufacturer: STMicroelectronics

General Description

The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply.

For Program and Erase operations the necessary high voltages are generated internally.

The device can also be programmed in standard programmers.

Overview

M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.

Key Features

  • ourth command cycle inputs the address and data to be programmed. For an Erase instruction (Block or Chip), the fourth and fifth cycles.