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M29F040 Datasheet 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory

Manufacturer: STMicroelectronics

General Description

The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.

The interface is directly compatible with most microprocessors.

PLCC32 and

Overview

M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Data Polling and Toggle bits Protocol for P/E.C.

Status MEMORY ERASE in BLOCKS – 8 Uniform Blocks of 64 KBytes each – Block Protection – Multiblock Erase ERASE SUSPEND and RESUME MODES LOW POWER CONSUMPTION – Read mode: 8mA typical (at 12MHz) – Stand-by mode: 25µA typical – Automatic Stand-by mode 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E2h Table 1.

Signal Names A0-A18 DQ0-DQ7 E G W VCC VSS Address Inputs Data Input / Outputs Chip Enable Output Enable Write Enable Supply Voltage Ground PLCC32 (K) TSOP32 (N) 8 x 20 mm Figure 1.

Key Features

  • Read Data Polling or Toggle Bit until Program completes. Program Data 5555h AAh 5555h AAh 2AAAh 55h 2AAAh.