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HD1530JL
High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display
Features
Figure 1. Package
PRELIMINARY DATA
■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1
■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS
t(s) ■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION
duc Applications ro ■ HORIZONTAL DEFLECTION OUTPUT FOR P DIGITAL TV, HDTV, AND HIGH -END te MONITORS le Description so The device uses a Diffused Collector in Planar b technology which adopts ”Enhanced High Voltage O Structure” (EHVS1) that was developed to fit - High-Definition CRT displays. t(s) The new HD product series features improved c silicon efficiency, bringing updated performance to u Horizontal Deflection output stages.
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Figure 2.
HD1530JL Datasheet
