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BUH2M20AP - HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

Description

The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

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® BUH2M20AP HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODE OPERATION. s APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR. DESCRIPTION The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max.
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