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B9NC60 - STB9NC60

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Full PDF Text Transcription

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N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™II MOSFET TYPE STB9NC60 STB9NC60-1 www.DataSheet4U.com s s s s s STB9NC60 STB9NC60-1 VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 3 12 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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