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SFX9130J - P-Channel MOSFET

Key Features

  • Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high temperature stability Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching replacement for IRF9130 types TX, TXV, S-Level screening available.

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Datasheet Details

Part number SFX9130J
Manufacturer SSDI
File Size 66.43 KB
Description P-Channel MOSFET
Datasheet download datasheet SFX9130J Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFX9130J 10 AMP /100 Volts 300 mΩ P-Channel MOSFET Features: • • • • • • • • Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high temperature stability Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching replacement for IRF9130 types TX, TXV, S-Level screening available DESIGNER’S DATA SHEET TO-257 Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max.