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SFT8600-5 - 1 AMP 1000 VOLTS NPN TRANSISTOR

Features

  • BVCEO to 400 volts.
  • Very Low Saturation Voltage.
  • Very Low Leakage.
  • High Gain from 20 mA to 250 mA.
  • 200°C Operating, Gold Eutectic Die Attach.
  • Superior Performance over JEDEC 2N5010-15 Series.
  • High Speed Switching tf = 0.4µS TYP Maximum Ratings Collector.
  • Emitter Voltage (RBE = 1KΩ) Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100º C Derate above 25º C Operating and Sto.

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Datasheet Details

Part number SFT8600-5
Manufacturer SSDI
File Size 117.61 KB
Description 1 AMP 1000 VOLTS NPN TRANSISTOR
Datasheet download datasheet SFT8600-5 Datasheet

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Full PDF Text Transcription

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package /5 = TO-5 SFT8600/5 1 AMP 1000 Volts NPN Transistor FEATURES:  BVCEO to 400 volts  Very Low Saturation Voltage  Very Low Leakage  High Gain from 20 mA to 250 mA  200°C Operating, Gold Eutectic Die Attach  Superior Performance over JEDEC 2N5010-15 Series  High Speed Switching tf = 0.
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