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SFF35N20M - N-Channel Power MOSFET

Key Features

  • TRENCH GATE technology Lowest ON-resistance in the industry UIS rated Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Enhanced replacement for IRHM250 types.

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Datasheet Details

Part number SFF35N20M
Manufacturer SSDI
File Size 72.69 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF35N20M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF35N20M SFF35N20Z 55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET Features: • • • • • • • TRENCH GATE technology Lowest ON-resistance in the industry UIS rated Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Enhanced replacement for IRHM250 types DESIGNER’S DATA SHEET TO-254 and TO-254Z note 1: Drain Current is package limited • • Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (junction temperature limited) Max.