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S3M0025120B - 1200V SIC POWER MOSFET

Description

S3M0025120B is a single SiC Power MOSFET packaged in T2PAK case.

The device is a high voltage n-channel Enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes.

Features

  • Positive temperature characteristics, easy to parallel.
  • Low on-resistance typ. RDS(on) = 25 mΩ.
  • Fast switching speed and low switching losses.
  • Very fast and robust intrinsic body diode.
  • Process of non-bright tin electroplatin. “-A” is an AEC-Q101 qualified device.

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Datasheet Details

Part number S3M0025120B
Manufacturer SMC Diode
File Size 1.77 MB
Description 1200V SIC POWER MOSFET
Datasheet download datasheet S3M0025120B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S3M0025120B Technical Data Data Sheet N2840, REV.- S3M0025120B 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 73 A RDS(on) = 25 mΩ Circuit Diagram Description S3M0025120B is a single SiC Power MOSFET packaged in T2PAK case. The device is a high voltage n-channel Enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3M0025120B is ideal for energy sensitive, high frequency applications in challenging environments. Features • Positive temperature characteristics, easy to parallel. • Low on-resistance typ. RDS(on) = 25 mΩ. • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. • Process of non-bright tin electroplatin. “-A” is an AEC-Q101 qualified device.
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