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SH5126SV351816-SE - 4GB (512Mx64) DDR3 SDRAM Module

Description

512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (RoHS Compliant).

Samsung, Rev.

Features

  • Standard = JEDEC.
  • ZQ calibration supported.
  • Configuration = Non-ECC.
  • On chip DLL align DQ, DQS and DQS transition.
  • Number of Module Ranks = 1 with CK transition.
  • Number of Devices = 8.
  • DM write data-in at both the rising and falling.
  • VDD = VDDQ = 1.35V/1.5V.
  • VDDSPD = 3.0V to 3.6V.
  • Cycle Time = 1.25ns.
  • CAS Latency = 5, 6, 7, 8, 9, 10, 11.
  • Additive Latency = 0, CL-1, and CL-2.

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Datasheet Details

Part number SH5126SV351816-SE
Manufacturer SMART Modular
File Size 449.96 KB
Description 4GB (512Mx64) DDR3 SDRAM Module
Datasheet download datasheet SH5126SV351816-SE Datasheet

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Full PDF Text Transcription

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SH5126SV351816-SE July 13, 2015 Part Numbers SH5126SV351816-SE Ordering Information Description 512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (RoHS Compliant). Device Vendor Samsung, Rev. E K4B4G0846E-BYK0 (All specifications of this module are subject to change without notice.) Corporate Headquarters: 39870 Eureka Dr., Newark, CA, 94560, USA • Tel: (510) 623-1231 • Fax: (510) 623-1434 • E-mail: info@smartm.com Europe: 305 Nasmyth Building, Scottish Enterprise Tech Park, Glasgow, Scotland, G75 0QD, United Kingdom • Tel: (+44) 1355 813455 • Fax: (+44) 1355 813456 Latin America: Av.
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