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SH2567MU325816SFV - 2GB (256M x 72) DDR3 SDRAM

Description

256Mx72 (2GB), DDR3, 244-Pin Unbuffered Mini-DIMM, Samsung, Rev.

F ECC, VLP, 256Mx8 Based, PC3-12800, DDR3-1600-11- K4B2G0846F-BYK0 11-11, 18.75mm, 1.5V, Halogen-Free & RoHS Compliant.

Features

  • Standard = JEDEC Pinout.
  • ZQ calibration supported.
  • Configuration = ECC.
  • On chip DLL align DQ, DQS and DQS transition.
  • Number of Module Ranks = 1 with CK transition.
  • Number of Devices = 9.
  • DM write data-in at both the rising and falling.
  • VDD = VDDQ = 1.5V.
  • VDDSPD = 3.0V to 3.6V.
  • Cycle Time = 1.25ns.
  • CAS Latency = 5, 6, 7, 8, 9, 10, 11.
  • Additive Latency = 0, CL-1, and CL-2.

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Datasheet Details

Part number SH2567MU325816SFV
Manufacturer SMART Modular
File Size 410.74 KB
Description 2GB (256M x 72) DDR3 SDRAM
Datasheet download datasheet SH2567MU325816SFV Datasheet

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SH2567MU325816SFV September 02, 2015 Part Numbers SH2567MU325816SFV Ordering Information Description Device Vendor 256Mx72 (2GB), DDR3, 244-Pin Unbuffered Mini-DIMM, Samsung, Rev. F ECC, VLP, 256Mx8 Based, PC3-12800, DDR3-1600-11- K4B2G0846F-BYK0 11-11, 18.75mm, 1.5V, Halogen-Free & RoHS Compliant. (All specifications of this module are subject to change without notice.) Corporate Headquarters: 39870 Eureka Dr., Newark, CA, 94560, USA • Tel: (510) 623-1231 • Fax: (510) 623-1434 • E-mail: info@smartm.com Europe: 305 Nasmyth Building, Scottish Enterprise Tech Park, Glasgow, Scotland, G75 0QD, United Kingdom • Tel: (+44) 1355 813455 • Fax: (+44) 1355 813456 Latin America: Av.
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