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SVF4N65M - N-channel MOSFET

Download the SVF4N65M datasheet PDF. This datasheet also covers the SVF4N65T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF4N65T-SL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N65M
Manufacturer SL
File Size 642.54 KB
Description N-channel MOSFET
Datasheet download datasheet SVF4N65M Datasheet

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Other Datasheets by SL

Part Number Description
SVF4N65MJ N-channel MOSFET
SVF4N65MJG N-channel MOSFET
SVF4N65CAD 650V N-CHANNEL MOSFET
SVF4N65CAF 650V N-CHANNEL MOSFET
SVF4N65CAK 650V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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