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SVF2N60T - 600V N-CHANNEL MOSFET

Download the SVF2N60T datasheet PDF. This datasheet also covers the SVF2N60M variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 2A,600V,RDS(on)(typ. )=3.7@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-251J-3L 12 3 TO-220F-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF2N60M-SL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF2N60T
Manufacturer SL
File Size 419.59 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF2N60T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF2N60RD 600V N-CHANNEL MOSFET Silan Microelectronics
SVF2N60RM 600V N-CHANNEL MOSFET Silan Microelectronics
SVF2N60RMJ 600V N-CHANNEL MOSFET Silan Microelectronics
SVF2N65CD 650V N-CHANNEL MOSFET Silan Microelectronics
SVF2N65CF 650V N-CHANNEL MOSFET Silan Microelectronics

Other Datasheets by SL

Part Number Description
SVF2N60C 600V N-CHANNEL MOSFET
SVF2N60CD 600V N-CHANNEL MOSFET
SVF2N60CF 600V N-CHANNEL MOSFET
SVF2N60CN 600V N-CHANNEL MOSFET
SVF2N60CNF 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 1 23 3 TO-126F-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 23 TO-251D-3L FEATURES  2A,600V,RDS(on)(typ.)=3.
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