Datasheet4U Logo Datasheet4U.com

SVF2N60MG - 600V N-CHANNEL MOSFET

Description

SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 2A,600V,RDS(on)(typ. )=3.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Datasheet Details

Part number SVF2N60MG
Manufacturer SL
File Size 516.56 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF2N60MG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF2N60RD 600V N-CHANNEL MOSFET Silan Microelectronics
SVF2N60RM 600V N-CHANNEL MOSFET Silan Microelectronics
SVF2N60RMJ 600V N-CHANNEL MOSFET Silan Microelectronics
SVF2N65CD 650V N-CHANNEL MOSFET Silan Microelectronics
SVF2N65CF 650V N-CHANNEL MOSFET Silan Microelectronics

Other Datasheets by SL

Part Number Description
SVF2N60M 600V N-CHANNEL MOSFET
SVF2N60MJ 600V N-CHANNEL MOSFET
SVF2N60C 600V N-CHANNEL MOSFET
SVF2N60CD 600V N-CHANNEL MOSFET
SVF2N60CF 600V N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
Published: |