Datasheet4U Logo Datasheet4U.com

SSF7NS65UG - N-Channel MOSFET

Description

The SSF7NS65UG series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Features

  • TO-251 (IPAK).
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance SSF7NS65UG Marking and pin Assignment Schematic diagram.

📥 Download Datasheet

Datasheet preview – SSF7NS65UG

Datasheet Details

Part number SSF7NS65UG
Manufacturer SILIKRON
File Size 439.47 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF7NS65UG Datasheet
Additional preview pages of the SSF7NS65UG datasheet.

📁 Similar Datasheet

  • SSF7NS65G - 650V N-Channel MOSFET (GOOD-ARK)
  • SSF7NS60D - 600V N-Channel MOSFET (GOOD-ARK)
  • SSF7N60A - Advanced Power MOSFET (Samsung Electronics)
  • SSF7N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
  • SSF7N60F - 600V N-Channel MOSFET (GOOD-ARK)
  • SSF7N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSF7N90A - Advanced Power MOSFET (Samsung Electronics)
  • SSF7002K-C - N-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SSF70N10A - Advanced Power MOSFET (Samsung Electronics)
  • SSF7400 - N-Ch Enhancement Mode Power MOSFET (SeCoS)
Other Datasheets by SILIKRON

Full PDF Text Transcription

Click to expand full text
Main Product Characteristics: VDSS RDS(on) 650V 0.65Ω (typ.) ID 7A ① Features and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF7NS65UG Marking and pin Assignment Schematic diagram Description: The SSF7NS65UG series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Published: |