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Shenzhen SI Semiconductors Co., LTD.
Product Specification
N- MOS / N-CHANNEL POWER MOSFET
SIF2N60D
●： RoHS
■ ●FEATURES：■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●：
●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY
●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C）
PARAMETER
SYMBOL
- Drain-source Voltage
VDS
- gate-source Voltage
VGS
Continuous Drain Current
ID
TC=25℃
Continuous Drain Current
ID
TC=100℃
VALUE
600 ±30
2.0
1.25
TO-220/220FP
UNIT
V V
A
A
Drain Current －Pulsed ①
IDM
8
A
Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature
TSTG
Single Pulse Avalanche Energy②
EAS
TO-220:54 TO-220FP:23
W
150
°C
-55-150
°C
120
mJ
VDS=600V RDS(ON)=4.5Ω ID=2.
SIF2N60D Datasheet
