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Shenzhen SI Semiconductors Co., LTD.
Product Specification
N- MOS / N-CHANNEL POWER MOSFET
SIF2N60C
●： RoHS
■ ●FEATURES：■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●：
●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY
●（Tc=25°C）
●Absolute Maximum Ratings（Tc=25°C） TO-251/251S/252
PARAMETER
SYMBOL VALUE UNIT
- Drain-source Voltage
VDS
600
V
- gate-source Voltage
VGS
±30
V
Continuous Drain Current TC=25℃
Continuous Drain Current TC=100℃
ID
2.0*
A
ID
1.25*
A
VDS=600V RDS(ON)=4.5Ω ID=2.0A
Drain Current －Pulsed ①
IDM
8.
SIF2N60C Datasheet
