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Shenzhen SI Semiconductors Co., LTD.
N-
MOS / N-CHANNEL POWER MOSFET
Product Specification
SIF2N60
FEATURES LOW ON-RESISTANCE
■RoHS COMPLIANT
FAST SWITCHING
RoHS
HIGH INPUT RESISTANCE
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
Tc=25°C Absolute Maximum Ratings Tc=25°C
PARAMETER
Drain-source Voltage
gate-source Voltage
SYMBOL VALUE
VDS
600
VGS
±20
TO-220
UNIT
V
V
Continuous Drain Current TC=25℃
Continuous Drain Current TC=100℃
Drain Current Pulsed ①
ID
2.0
A
ID
1.25
A
IDM
8
A
Power Dissipation Junction Temperature Storage Temperature
PD
54
W
Tj
150
°C
TSTG
-55-150
°C
Single Pulse Avalanche Energy
EAS
120
mJ
②
VDS=600V RDS(ON)=4.3Ω ID=2.
SIF2N60 Datasheet
