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SGMNM05330 30V, Power, Single N-Channel,
TDFN Package, MOSFET
FEATURES
● High Power and Current Handing Capability ● Low On-State Resistance ● Low Total Gate Charge and Capacitance Losses ● RoHS Compliant and Halogen Free
PRODUCT SUMMARY
RDSON (TYP) VGS = 10V 4.3mΩ
RDSON (MAX) VGS = 10V 5mΩ
ID (MAX) TA = +25℃
20A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) (1) Total Dissipation Avalanche Current (2) Avalanche Energy (2) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10s)
SYMBOL VALUE UNITS
VDS
30
V
VGS
±20
V
ID
20
A
IDM
60
A
PD
2.4
W
IAS
26
A
EAS
33.
SGMNM05330 Datasheet
