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HZS2A1 - SILICON EPITAXIAL PLANER ZENER DIODES

Features

  • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
  • Wide spectrum from 1.6V through 38V of zener voltage provide flexible.

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Datasheet Details

Part number HZS2A1
Manufacturer SEMTECH
File Size 436.19 KB
Description SILICON EPITAXIAL PLANER ZENER DIODES
Datasheet download datasheet HZS2A1 Datasheet

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Full PDF Text Transcription

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HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch speed automatic insertion. White Cathode Band Part No. Black Color max. 1.9 max. 0.45 Glass case JEDEC DO-34 Dimensions in mm min. 27.5 max. 2.9 Absolute Maximum Ratings (Ta = 25 OC) Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TS Value 400 200 -55 to +175 Unit mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.
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