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BC368
NPN Silicon Epitaxial Planar Transistor
Applications • General purpose switching and amplification • Power applications such as audio output stages
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 10 V, IC = 5 mA at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 1 A
Collector Base Cutoff Current at VCB = 25 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 1 A, I
BC368 Datasheet
