2SC2240
NPN Silicon Epitaxial Planar Transistor for low noise audio amplifier applications.
The transistor is subdivided into two groups, G and L according to its DC current gain
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg
Value 120 120
5 100 20 625 150
- 55 to + 150
Unit V V V m A m A m W OC OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain at VCE = 6 V, IC = 2 m A
Current Gain Group G L h FE h FE
Collector Base Cutoff Current at VCB = 120 V
ICBO
Emitter Base Cutoff Current at VEB = 5 V
IEBO
Collector Emitter Breakdown Voltage at IC = 1 m A
V(BR)CEO
Collector Emitter Saturation Voltage at IC = 10 m A, IB =...
