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ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio frequency power amplifier and low speed switching applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - DC Collector Current - Pulse 1) Base Current - DC
Total Power Dissipation @ TC = 25 OC Total Power Dissipation @ TA = 25 OC Operating and Storage Junction Temperature Range 1) PW=10ms, Duty Cycle ≤ 50%
Symbol -VCBO -VCEO -VEBO
-IC -IC -IB
PD PD TJ, Ts
E C B
TO-126 Plastic Package
Value 40 30 5 3 7 0.6
10 1.
2SB772T Datasheet
