2N2222A
2N2222 / 2N2222A
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into one group according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Power Dissipation Junction Temperature Storage Temperature Range
2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A
Symbol
VCBO
VCEO
VEBO IC Ptot Tj Tstg
Value
60 75 30 40 5 6 600
- 55 to + 150
Unit V
V m A m W OC OC
SEMTECH ELECTRONICS LTD.
®
Dated : 12/08/2016 Rev:02
2N2222 / 2N2222A
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 10 V, IC = 0.1 m A at VCE = 10 V, IC = 1 m A at VCE = 10 V, IC = 10 m A at VCE = 10 V, IC = 150 m A at VCE = 10 V, IC = 500 m A
Collector Base Cutoff Current at VCB = 50 V at VCB...
Representative 2N2222A image (package may vary by manufacturer)
