• Part: 1SS187
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 307.49 KB
Download 1SS187 Datasheet PDF
SEMTECH
1SS187
Features - Small package - Low forward voltage - Fast reverse recovery time - Small total capacitance Applications - Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 m A Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 m A Marking Code: D3 SOT-23 Plastic Package Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 85 80 100 300 2 150 150 - 55 to + 150 Unit V V m A m A A m W OC OC Symbol VF CT trr Max. 1.2 0.1 0.5 4 Unit V µA p F ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/01/2008 SEMTECH ELECTRONICS...