1SS176
Silicon Epitaxial Planar Switching Diode
Applications
- High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Peak Reverse Voltage Average Rectified Forward Current Forward Voltage Surge Forward Current at t = 1s Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 m A Reverse Current at VR = 30 V Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 100 m A, VR = 6 V, RL = 100 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Symbol
Value
Unit
IF(AV)
100 m A
300 m A
IFSM
Tj
Tstg
- 65 to + 175
Symbol
Max.
Unit
µA
Ctot
3 p F trr
4...
