• Part: 1SS106
  • Description: SILICON SCHOTTKY BARRIER DIODE
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 112.46 KB
Download 1SS106 Datasheet PDF
SEMTECH
1SS106
Features - Detection efficiency is very good. - Small temperature coefficient. - High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Symbol VR IO TJ Tstg Value 10 30 125 - 55 to + 125 Unit V m A OC OC Electrical Characteristics at Ta = 25 OC Parameter Forward Current at VF = 1 V Reverse Current at VR = 6 V Capacitance at VR = 1 V, f = 1 MHz Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 p F ESD Capability 1) at C = 200 p F, both forward and reverse direction 1 pulse. 1) Failure criterion: IR ≥ 140 µA at VR = 6 V Symbol IF IR C η - Min. 4.5 70 100 Max. 70 - Unit m A µA p F % V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock...