• Part: 1N4448WS
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 425.90 KB
Download 1N4448WS Datasheet PDF
SEMTECH
1N4448WS
DESCRIPTION Cathode Anode W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 100 80 150 300 0.5 200 150 - 65 to + 150 Unit V V m A m A A m W OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 m A at IF = 10 m A at IF = 100 m A at IF = 150 m A Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 m A, Irr = 0.1 X IR , RL = 100 Ω Symbol IR V(BR)R Ctot trr Min. - - - - Max. 0.72 0.855 1 1.25 100 25 50 30 - 4 Unit V n A n A µA µA V p F ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock...
1N4448WS reference image

Representative 1N4448WS image (package may vary by manufacturer)