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HXB15H1G800CF - 1-Gbit Double-Date-Rate-Three SDRAM

Description

The 1-Gbit DDR3 DRAM is a high-speed Double-Data-RateTwo CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as an octal bank DRAM.

The 1-Gbit device is organized as 8 Mbit ×16 I/O ×8 banks or 16 Mbit ×8 I/O ×8 banks.

Features

  • The 1-Gbit Double-Data-Rate-Three SDRAM offers the following key features:.
  • 1.5 V ±0.075 V Power Supply.
  • Off-Chip-Driver impedance adjustment (OCD) and 1.5 V ±0.075 V (SSTL_15) compatible I/O.
  • DRAM organizations with 8/16 data in/outputs.
  • Double Data Rate architecture:.
  • two data transfers per clock cycle.
  • eight internal banks for concurrent operation.
  • Programmable CAS Latency: 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported.

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Datasheet Details

Part number HXB15H1G800CF
Manufacturer SCSemicon
File Size 821.38 KB
Description 1-Gbit Double-Date-Rate-Three SDRAM
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July 2014 HXB15H1G800CF HXB15H1G160CF 1-Gbit Double-Date-Rate-Three SDRAM DDR3 SDRAM EU RoHS HF Compliant Products Data Sheet Rev. 1 Revision History: Rev. 1, 2014-07 Initial version Data Sheet HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: info@scsemicon.com SCS_techdoc_A4, 2014-07 2 Data Sheet 1 Overview HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM This chapter gives an overview of the 1-Gbit Double-Data-Rate-Three SDRAM product family and describes its main characteristics. 1.
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