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SW840A - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 0.85Ω)@VGS=10V.
  • Gate Charge (Typ 35nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220 SW840A N-channel MOSFET BVDSS : 500V ID : 8.5A RDS(ON) : 0.85ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General.

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Datasheet Details

Part number SW840A
Manufacturer SAMWIN
File Size 723.22 KB
Description N-channel MOSFET
Datasheet download datasheet SW840A Datasheet

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Full PDF Text Transcription

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 0.85Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 SW840A N-channel MOSFET BVDSS : 500V ID : 8.5A RDS(ON) : 0.85ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.
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