RU8080R
Features
- 80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V
- Super High Dense Cell Design
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Devices Available (Ro HS pliant)
Pin Description
TO-220
Applications
- DC-DC Converters
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A- SEP., 2011
Rating
80 ±25 175 -55 to...
