D
Applications
Power Supply
G S
TO252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Cu
Features
70V/80A,
RDS (ON) =5.7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant)
Pin.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
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RU7080L
N-Channel Advanced Power MOSFET
Features
• 70V/80A,
RDS (ON) =5.7mΩ(Typ.
RU7080L Datasheet
