Applications
High efficiency switch mode power supplies
Lighting
TO220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature
Features
650V/4.5A,
RDS (ON) =1800mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Fast Switching.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant)
Pin.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
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RU6Z5R
N-Channel Advanced Power MOSFET
Features
• 650V/4.5A,
RDS (ON) =1800mΩ(Typ.
RU6Z5R Datasheet
