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RU6H1L - N-Channel Advanced Power MOSFET

Description

TO-252 Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG

Features

  • 600V/1.2A, RDS (ON) =10Ω (Typ. ) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 4pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU6H1L
Manufacturer Ruichips
File Size 322.23 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6H1L Datasheet

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Full PDF Text Transcription

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RU6H1L N-Channel Advanced Power MOSFET Features •600V/1.2A, RDS (ON) =10Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ.
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