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RU65110R - N-Channel Advanced Power MOSFET

Description

TO-220 Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature T

Features

  • 65V/110A, RDS (ON) =6mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU65110R
Manufacturer Ruichips
File Size 331.81 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU65110R Datasheet

Full PDF Text Transcription (Reference)

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RU65110R N-Channel Advanced Power MOSFET Features • 65V/110A, RDS (ON) =6mΩ(Typ.
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