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RU6055R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/60A, RDS (ON) =9mΩ (Type) @ VGS=10V,IDS=30A • Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
• Switching Application Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 60
①
Unit
Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A
Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC
③
240 60
A A
②
Maximum Po
RU6055R Datasheet
