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RU6051L - N-Channel Advanced Power MOSFET

Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Features

  • 60V/50A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =12mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU6051L
Manufacturer Ruichips
File Size 415.94 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6051L Datasheet

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Full PDF Text Transcription

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RU6051L N-Channel Advanced Power MOSFET Features • 60V/50A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management. • Switch Applications.
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