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RU602B - N-Channel Advanced Power MOSFET

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

  • 60V/1.5A, RDS (ON) =220mΩ(Typ. )@VGS=10V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU602B
Manufacturer Ruichips
File Size 307.65 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU602B Datasheet

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Full PDF Text Transcription

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RU602B N-Channel Advanced Power MOSFET Features • 60V/1.5A, RDS (ON) =220mΩ(Typ.
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