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RU55L18L - P-Channel Advanced Power MOSFET

Description

TO252 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain

Features

  • -60V/-16A, RDS (ON) =100mΩ(tpy. )@VGS=-10V RDS (ON) =125mΩ(tpy. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU55L18L
Manufacturer Ruichips
File Size 290.04 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU55L18L Datasheet

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Full PDF Text Transcription

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RU55L18L P-Channel Advanced Power MOSFET MOSFET Features • -60V/-16A, RDS (ON) =100mΩ(tpy.)@VGS=-10V RDS (ON) =125mΩ(tpy.)@VGS=-4.
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