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RU4H10R - N-Channel Advanced Power MOSFET

Description

TO-220 Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG

Features

  • 400V/10A, RDS (ON) =0.45Ω (Typ. ) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 23pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available RU4H10R N-Channel Advanced Power MOSFET MOSFET Pin.

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Datasheet Details

Part number RU4H10R
Manufacturer Ruichips
File Size 289.17 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU4H10R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ.
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