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RU40231Q2 - N-Channel Advanced Power MOSFET

Description

TO-3P Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar

Features

  • 40V/230A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =3.5mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU40231Q2
Manufacturer Ruichips
File Size 293.48 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU40231Q2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU40231Q2 N-Channel Advanced Power MOSFET MOSFET Features • 40V/230A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.
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