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RU3710S - N-Channel Advanced Power MOSFET

Description

TO-263 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pul

Features

  • 100V/60A RDS (ON)=14mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • Lead Free and Green Available.

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Datasheet Details

Part number RU3710S
Manufacturer Ruichips
File Size 314.12 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU3710S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU3710S N-Channel Advanced Power MOSFET Features • 100V/60A RDS (ON)=14mΩ(Typ.
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