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RU30S15H - P-Channel Advanced Power MOSFET

Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large H

Features

  • -30V/-15A, RDS (ON) =15mΩ(Typ. )@VGS=-10V RDS (ON) =22mΩ(Typ. )@VGS=-4.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU30S15H
Manufacturer Ruichips
File Size 384.86 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU30S15H Datasheet

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Full PDF Text Transcription

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RU30S15H P-Channel Advanced Power MOSFET Features • -30V/-15A, RDS (ON) =15mΩ(Typ.)@VGS=-10V RDS (ON) =22mΩ(Typ.)@VGS=-4.
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