Datasheet4U Logo Datasheet4U.com

RU30J30M2 - Dual N-Channel Advanced Power MOSFET

Description

G2S2 S2 S2 G1D1D1D1 PDFN5 6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

Features

  • 30V/30A, RDS (ON) =7mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
  • Fast Switching Speed.
  • Low gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU30J30M2
Manufacturer Ruichips
File Size 661.88 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30J30M2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU30 Fast-Recovery Rectifier Diodes Sanken electric
RU3060L N-Channel MOSFET VBsemi
RU30A Fast-Recovery Rectifier Diodes Sanken electric
RU30E4B N-Channel MOSFET VBsemi
RU30Z Fast-Recovery Rectifier Diodes Sanken electric

Other Datasheets by Ruichips

Part Number Description
RU30J30M Dual N-Channel Advanced Power MOSFET
RU30100L N-Channel Advanced Power MOSFET
RU30100R N-Channel Advanced Power MOSFET
RU30105L N-Channel Advanced Power MOSFET
RU30105R N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RU30J30M2 Dual N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.
Published: |