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RU30D10H - N-Channel Advanced Power MOSFET

Description

SOP-8 Applications SMPS Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forwar

Features

  • 30V/10A, RDS (ON) =16mΩ (Typ. ) @ VGS=10V RDS (ON) =24mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU30D10H
Manufacturer Ruichips
File Size 264.27 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30D10H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU30D10H N-Channel Advanced Power MOSFET MOSFET Features • 30V/10A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =24mΩ (Typ.) @ VGS=4.
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