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RU3030M2 - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

Features

  • 30V/30A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =15mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Fast Switching Speed.
  • Low gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU3030M2
Manufacturer Ruichips
File Size 314.01 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU3030M2 Datasheet

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Full PDF Text Transcription

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RU3030M2 N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =15mΩ(Typ.)@VGS=4.
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