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RU30230R - N-Channel Advanced Power MOSFET

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

Features

  • 30V/230A, RDS (ON) =2mΩ (Typ. ) @ VGS=10V,IDS=75A RDS (ON) =2.5mΩ (Typ. ) @ VGS=4.5V,IDS=60A.
  • Ultra Low On-Resistance.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

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Datasheet Details

Part number RU30230R
Manufacturer Ruichips
File Size 297.30 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30230R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU30230R N-Channel Advanced Power MOSFET MOSFET Features • 30V/230A, RDS (ON) =2mΩ (Typ.) @ VGS=10V,IDS=75A RDS (ON) =2.5mΩ (Typ.) @ VGS=4.
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