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RU20T7G - N-Channel Advanced Power MOSFET

Description

TSSOP-8 Applications PWM Applications Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Con

Features

  • 20V/7A, RDS (ON) =12mΩ (Typ. ) @ VGS=4.5V RDS (ON) =18mΩ (Typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU20T7G
Manufacturer Ruichips
File Size 249.12 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU20T7G Datasheet

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Full PDF Text Transcription

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RU20T7G N-Channel Advanced Power MOSFET MOSFET Features • 20V/7A, RDS (ON) =12mΩ (Typ.) @ VGS=4.5V RDS (ON) =18mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description TSSOP-8 Applications • PWM Applications Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.
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