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RU20P2B - P-Channel Advanced Power MOSFET

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

  • -20V/-2.4A, RDS (ON) =95mΩ(Typ. )@VGS=-4.5V RDS (ON) =140mΩ(Typ. )@VGS=-2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU20P2B
Manufacturer Ruichips
File Size 324.26 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P2B Datasheet

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Full PDF Text Transcription

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RU20P2B P-Channel Advanced Power MOSFET Features • -20V/-2.4A, RDS (ON) =95mΩ(Typ.)@VGS=-4.5V RDS (ON) =140mΩ(Typ.)@VGS=-2.5V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.
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