D
G S
TO252
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
I
Features
20V/60A,
RDS (ON) =6mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).
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RU20E60L
N-Channel Advanced Power MOSFET
Features
• 20V/60A,
RDS (ON) =6mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC/DC converter • Motor Drives
Pin Description
D
G S
TO252
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=4.
RU20E60L Datasheet
